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IHEP 2002 - 25 (In Russian) | |
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| L.M.Aleksandrov, A.N.Aspisov, (VNIIA, Moscow, Russia) A.G.Alekseev, V.T.Baranov, G.I.Britvich, N.N.Yarygin(IHEP, Protvino, Russia) | ||
| Radiation Hardness of Some Elements and the Electronic Modules of Equipment on Accelerators | ||
| Protvino, 2002.- p.12, figs. 6, table 8, refs.:9. | ||
The results on radiation hardness of the different types of diodes, thyristors, transistors, chips and some electronic modules measured on the U-70 accelerator are presented. Comparison of the radiation effects on the bipolar transistor between U-70 and reactor is discussed.
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