IHEP 2004 - 03
	V.A.Batarin, A.M.Davidenko, A.A.Derevschikov, Y.M.Goncharenko, V.N.Grishin, V.A.Kachanov, V.Yu.Khodyrev, A.S.Konstantinov, V.I.Kravtsov, V.S.Lukanin, Y.A.Matulenko, Y.M.Melnick, A.P.Meschanin, N.E.Mikhalin, N.G.Minaev, V.V.Mochalov, D.A.Morozov, L.V.Nogach, A.V.Ryazantsev, P.A.Semenov, V.K.Semenov, K.E.Shestermanov, L.F.Soloviev, A.V.Uzunian, A.N.Vasiliev, A.E.Yakutin (IHEP, Protvino, Russia), J.Butler, J.Yarba (Fermilab, Batavia, USA), T.Y.Chen (Nanjing University, Nanjing, China), Y.Kubota (University of Minnesota, Minneapolis, USA), S.Stone (Syracuse University, Syracuse, USA)
	Comparison of Radiation Damage in Lead Tungstate Crystals under Pion and Gamma Irradiation
	Protvino, 2004. – p. 9, figs. 8, table 1, refs.: 9.

Studies of the radiation hardness of lead tungstate crystals produced by the Bogoroditsk Techno-Chemical Plant in Russia, the Shanghai Institute of Ceramics in China have been carried out at IHEP, Protvino. The crystals were irradiated by a 40-GeV pion beam. After full recovery, the same crystals were irradiated using a $^{137}Cs$ gamma source. The dose rate profiles along the crystal length were similar in both cases. We compare the effects of the two types of radiation on the crystals light output.

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