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IHEP 2008 - 11 (In English) | ||
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A.G.Afonin, V.T.Baranov, G.I.Britvich, A.P.Bugorskiy,
Yu.A. Chesnokov, V.N.Chepegin,
V.I.Kotov, A.E.Kushnirenko, V.A.Maisheev,V.A.Pikalov, I.A.Yazynin
(Institute for High Energy Physics, Protvino, Russia)
Yu.M.Ivanov, V.V.Skorobogatov
(Petersburg Nuclear Physics Institute, Gatchina, Leningrad Region, Russia)
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Observation of Radiation from 10 GeV Positrons at Volume Reflection in Bent Silicon Monocrystal
| Protvino, 2008. – p. 17,figs: 5, refs.: 9.
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The experimental results of radiation of 10 GeV positron beam in bent silicon single crystals are presented. The comparison with theoretical calculations is considered.
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