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IHEP 98 - 18
(In Russian) | |
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| N.K. Bulgakov, A.P. Vorobev, V.F. Golovkin, S.N. Golovnya,A.G. Holodenko, Yu.P. Tsyupa, V.B. Chmil (IHEP, Protvino, Russia) N.V. Baranova, A.G. Voronin, D.E. Karmanov, E.N. Kuznetsov, M.M. Merkin (INF, RSU, Moscow, Russia) | ||
| Radiation Test of Silicon Detectors at Different Temperatures | ||
| Protvino, 1999.-p.13, figs.15, refs.:3. | ||
The results of the radiation stability study of $Si$-structures to construct on their base the coordinate detectors have been presented. The samples were irradiated at the IHEP booster under different temperature conditions. The analysis of volt-current characteristics of the samples irradiated by a flow of protons was made, and on this basis the conclusion was drawn on the change of electrophysical and structural characteristics of the test samples. The search for the radiation resistance showed that the samples irradiated at temperature $T$= --19~$^{o}$C were radiation harder than the samples irradiated at room temperature.
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