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IHEP 98 - 53
V.Ammosov, A.Ivanilov, V.Koreshev, Yu.Sviridov, V.Zaets (Institute for High Energy Physics, Protvino, Russia), A.Semak (Moscow Engineering and Physics Institute, Russia)
Study of SF6 Addition Influence on Narrow Gap RPC Performance
Protvino, 1999.-p.11, figs.9, tables 1, refs.:5.


Charge, fired strip multiplicity and arrival time distributions for an induced signal were investigated for the 2~mm gap RPC operating with several tetrafluoroethane (\C2H2F4) based mixtures with variation of isobutane (\iC4H10) and sulphur hexafluoride (\SF6) concentrations. Suppression of large fast charges for the mixtures containing \SF6 in comparison with the binary \C2H2F4/\iC4H10 mixture was confirmed. This suppression allows one to have a wide plateau region ($\ge$1~kV) with a small average charge and reduced tail of high charges. Exclusion of isobutane from the mixture with $2\%$ of \SF6 does not change charge distributions.


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